smt power inductor si65 type features ? rohs compliant. ? low profile (4.85mm max.height)), smd type. ? unshielded. ? self-leads,suitable for high density mounting. ? high energy storage and low dcr ? provided with embossed carrier tape packing. ? ideal for power source circuits, dc-dc conver ter, dc-ac inverters inductor applications. ? in addition to the standard versions shown here, customized inductors are available to meet your exact requirements. mechanical dimension: recommended pad patterns c b d 6.1 1.1 5.8 unit:mm/inch a = 5.80.2 / 0.2280.008 b = 5.20.2 / 0.2050.008 c = 4.50.35 / 0.1770.014 d = 1.20.2 / 0.0470.008 a electrical characteristics: 25
, 100khz, 0.1v for 0.33~8.2uh. 1khz,1.0v for 10~220uh. 1.tolerance of inductance15% for 0.33~8.2uh, 10% for 10~220uh. 2.irated is the dc current which cause the inductance drop less than 10% of its nominal inductance without current and the surface temperature of the part increase less than 45
. 3.operating temperature:-20
to 105
(including self-temperature rise). part no. l 1 (uh) dcr ( ? ) max irated 2 (adc) si65-r56l 0.56 0.0095 6.60 si65-r82l 0.82 0.0110 6.00 si65-1r0l 1.00 0.0125 4.50 si65-1r5l 1.50 0.0160 4.00 si65-2r2l 2.20 0.0230 3.20 si65-2r7l 2.70 0.0250 2.90 si65-3r3l 3.30 0.0300 2.60 si65-4r7l 4.70 0.0340 2.30 si65-6r8l 6.80 0.0550 1.80 si65-8r2l 8.20 0.0600 1.70 si65-100 k 10.00 0.0500 1.50 si65-120 k 12.00 0.1200 1.40 si65-150 k 15.00 0.1400 1.30 si65-180 k 18.00 0.1500 1.20 si65-220 k 22.00 0.1800 1.10 si65-270 k 27.00 0.2000 0.97 si65-330 k 33.00 0.2300 0.88 si65-390 k 39.00 0.3200 0.80 si65-470 k 47.00 0.3700 0.72 si65-560 k 56.00 0.4200 0.68 si65-680 k 68.00 0.4600 0.61 si65-820 k 82.00 0.6000 0.58 si65-101 k 100.00 0.7000 0.52 si65-121 k 120.00 0.9300 0.48 si65-151 k 150.00 1.1000 0.40 si65-181 k 180.00 1.3800 0.38 si65-221 k 220.00 1.5700 0.35
|
